Additional Product Information

KHX2000C9D3T1K2/4GX 4GB (2GB 256M x 64-Bit x 2 pcs.) DDR3-2000MHz CL9 240-Pin DIMM Kit

DESCRIPTION: Kingston's KHX2000C9D3T1K2/4GXis a kit of two 256M x 64-bit 2GB (2048MB) DDR3-2000MHz CL9 SDRAM

(Synchronous DRAM) memory modules, based on sixteen 128Mx 8-bit DDR3 FBGA components per module. Each module kit supports Intel® XMP(Extreme Memory Profiles). Total kit capacity is 4GB. Each module has been tested to run at DDR3-2000MHz at a low latency timing of 9-9-9 at1.65V. The SPDs are programmedto JEDEC standard latency DDR3-1333MHz timing of9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingersand requires +1.5V. The JEDEC standard electrical and mechanical specifications are as follows:

FEATURES: JEDEC standard 1.5V ± 0.075V Power Supply VDDQ = 1.5V ± 0.075V 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 5,6,7,8,9,10 Posted CAS Programmable Additive Latency:0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 7(DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C Asynchronous Reset PCB : Height 2.401” (61.00mm) w/ heatsink, double sided component PERFORMANCE: CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns(min.)

Refresh to Active/Refresh Command Time (tRFCmin) 110ns Row Active Time (tRASmin) 36ns(min.)

Power 1.800 W (operating per module) UL Rating 94 V - 0 Operating Temperature 0o C to 85o C

Storage Temperature -55o C to +100o C