Additional Product Information

KVR1333D3N9K2/8G
8GB (4GB 2Rx8 512M x 64-Bit x 2 pcs.)
PC3-10600 CL9 240-Pin DIMM Kit

Important Information: The module defined in this data sheet is one of several configurations available under
this part number. While all configurations are compatible, the DRAM combination and/or the module height may
vary from what is described here.

DESCRIPTION

ValueRAM's KVR1333D3N9K2/8G is a kit of two 512M x 64-bit
(4GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8
memory modules, based on sixteen 256M x 8-bit DDR3-1333
FBGA components per module. Total kit capacity is 8GB. The
SPD's are programmed to JEDEC standard latency DDR3-1333
timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact
fingers. The electrical and mechanical specifications are as
follows:

FEATURES

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration: Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component

SPECIFICATIONS

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.410 W* (per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C