Additional Product Information

KVR1333D3N9K2/4G 4GB (2GB 256M x 64-Bit x 2 pcs.)

PC3-10600 CL9 240-Pin DIMM KitPage 1

DESCRIPTION: ValueRAM's KVR1333D3N9K2/4G isa kit of two 256M x 64-bit 2GB(2048MB) DDR3-1333 CL9 SDRAM (Synchronous DRAM) memory modules, based onsixteen 128M x 8-bit DDR3-1333FBGA components per module. Total kit capacity is 4GB (4096MB). The SPDs are programmed to JEDEC standard latency 1333Mhz timing of 9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers and requires +1.5V. The electrical and mechanical specifications are as

follows: FEATURES: JEDEC standard 1.5V ± 0.075V Power Supply VDDQ = 1.5V ± 0.075V 667MHz fCK for 1333Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 5,6,7,8,9,10 Posted CAS Programmable Additive Latency:0, CL - 2, or CL - 1 clock Programmable CAS Write Latency(CWL) = 9(DDR3-1333) 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

On Die Termination using ODT pin

Average Refresh Period 7.8us at lower then TCASE 85°C, 3.9us at 85°C < TCASE . 95°C Asynchronous Reset 1066Mbps CL7 doesn’t have backward compatibility with 800Mbps CL5 PCB : Height 1.180” (30.00mm),double sided component PERFORMANCE: CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns(min.)

Refresh to Active/Refresh Command Time (tRFCmin) 90ns Row Active Time (tRASmin) 36ns(min.)

Power TBD W (operating per module) UL Rating 94 V - 0 Operating Temperature 0o C to 85o C

Storage Temperature -55o C to +100o C