Additional Product Information

KVR1333D3N9/4G
4GB 2Rx8 512M x 64-Bit PC3-10600
CL9 240-Pin DIMM

Important Information: The module defined in this data sheet is one of several configurations available under
this part number. While all configurations are compatible, the DRAM combination and/or the module height may
vary from what is described here.

DESCRIPTION

This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory
module, based on sixteen 256M x 8-bit DDR3-1333 FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1333 timing of 9-9-9 at 1.5V. This 240-pin DIMM
uses gold contact fingers. The electrical and mechanical
specifications are as follows:

FEATURES

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 667MHz fCK for 1333Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration: Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB: Height 1.18” (30mm), double sided component
Document No. VALUERAM0843-001.C00 08/17/11 Page 1
Memory Module Specifi cations
*Power will vary depending on the SDRAM used.

SPECIFICATIONS

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Power (Operating) 1.410 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
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